PSMN4R3-40MSHX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 95A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2338 pF @ 25 V
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Технічний опис PSMN4R3-40MSHX Nexperia USA Inc.
Description: NEXPERIA - PSMN4R3-40MSHX - Leistungs-MOSFET, n-Kanal, 40 V, 95 A, 0.0035 ohm, LFPAK33, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40, rohsCompliant: YES, Dauer-Drainstrom Id: 95, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 90, Gate-Source-Schwellenspannung, max.: 3, euEccn: NLR, Verlustleistung: 90, Bauform - Transistor: LFPAK33, Anzahl der Pins: 8, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0035, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 175, Drain-Source-Durchgangswiderstand: 0.0035, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції PSMN4R3-40MSHX за ціною від 57.73 грн до 148.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN4R3-40MSHX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 95A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2338 pF @ 25 V |
на замовлення 2852 шт: термін постачання 21-31 дні (днів) |
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PSMN4R3-40MSHX | Nexperia |
MOSFETs PSMN4R3-40MSH/SOT1210/mLFPAK |
на замовлення 919 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||
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PSMN4R3-40MSHX | NEXPERIA |
Description: NEXPERIA - PSMN4R3-40MSHX - Leistungs-MOSFET, n-Kanal, 40 V, 95 A, 0.0035 ohm, LFPAK33, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 rohsCompliant: YES Dauer-Drainstrom Id: 95 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 90 Gate-Source-Schwellenspannung, max.: 3 euEccn: NLR Verlustleistung: 90 Bauform - Transistor: LFPAK33 Anzahl der Pins: 8 Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0035 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0035 SVHC: No SVHC (17-Jan-2023) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| PSMN4R3-40MSHX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 95A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2338 pF @ 25 V
Description: MOSFET N-CH 40V 95A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2338 pF @ 25 V
на замовлення 2852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.56 грн |
| 10+ | 91.24 грн |
| 50+ | 68.76 грн |
| 100+ | 57.73 грн |
| PSMN4R3-40MSHX |
|
Виробник: Nexperia
MOSFETs PSMN4R3-40MSH/SOT1210/mLFPAK
MOSFETs PSMN4R3-40MSH/SOT1210/mLFPAK
на замовлення 919 шт:
термін постачання 21-30 дні (днів)
| PSMN4R3-40MSHX |
|
Виробник: NEXPERIA
Description: NEXPERIA - PSMN4R3-40MSHX - Leistungs-MOSFET, n-Kanal, 40 V, 95 A, 0.0035 ohm, LFPAK33, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 95
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 90
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 90
Bauform - Transistor: LFPAK33
Anzahl der Pins: 8
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0035
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0035
SVHC: No SVHC (17-Jan-2023)
Description: NEXPERIA - PSMN4R3-40MSHX - Leistungs-MOSFET, n-Kanal, 40 V, 95 A, 0.0035 ohm, LFPAK33, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
rohsCompliant: YES
Dauer-Drainstrom Id: 95
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 90
Gate-Source-Schwellenspannung, max.: 3
euEccn: NLR
Verlustleistung: 90
Bauform - Transistor: LFPAK33
Anzahl der Pins: 8
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0035
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0035
SVHC: No SVHC (17-Jan-2023)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)