на замовлення 6551 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.62 грн |
| 10+ | 102.37 грн |
| 100+ | 74.30 грн |
| 500+ | 68.42 грн |
| 1000+ | 60.47 грн |
Відгуки про товар
Написати відгук
Технічний опис PSMN4R5-40PS,127 Nexperia
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V.
Інші пропозиції PSMN4R5-40PS,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PSMN4R5-40PS,127 | Виробник : NEXPERIA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 545A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 42.3nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
PSMN4R5-40PS,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V |
товару немає в наявності |
|
|
|
PSMN4R5-40PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 545A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 545A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 42.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |