PSMN4R8-100BSEJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис PSMN4R8-100BSEJ Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 405W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN4R8-100BSEJ за ціною від 120.81 грн до 397.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PSMN4R8-100BSEJ | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
на замовлення 1819 шт: термін постачання 21-31 дні (днів) |
|
||||||||
 |
PSMN4R8-100BSEJ | Nexperia |
MOSFETs TO263 100V 120A N-CH MOSFET |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
|
| PSMN4R8-100BSEJ |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
на замовлення 1819 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 376.67 грн |
| 10+ | 240.89 грн |
| 50+ | 188.33 грн |
| 100+ | 160.86 грн |
| PSMN4R8-100BSEJ |
|
Виробник: Nexperia
MOSFETs TO263 100V 120A N-CH MOSFET
MOSFETs TO263 100V 120A N-CH MOSFET
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 397.06 грн |
| 10+ | 256.43 грн |
| 100+ | 146.35 грн |
| 500+ | 120.81 грн |