PSMN5R0-100PS,127 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 5274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.76 грн |
| 10+ | 225.67 грн |
| 100+ | 182.54 грн |
| 500+ | 152.27 грн |
| 1000+ | 130.38 грн |
| 2000+ | 122.77 грн |
| 5000+ | 115.85 грн |
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Технічний опис PSMN5R0-100PS,127 Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V.
Інші пропозиції PSMN5R0-100PS,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN5R0-100PS,127 | Виробник : NEXPERIA |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail |
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PSMN5R0-100PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 622A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN5R0-100PS,127 | Виробник : Nexperia |
MOSFET PSMN5R0-100PS/SOT78/SIL3P |
товар відсутній |
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PSMN5R0-100PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 622A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |