PSMN5R8-30LL,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис PSMN5R8-30LL,115 NXP USA Inc.
Description: MOSFET N-CH 30V 40A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN3333 (3.3x3.3), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN5R8-30LL,115
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PSMN5R8-30LL,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 40A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN3333 (3.3x3.3) Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN5R8-30LL,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 40A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1316 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.