PSMN6R0-25YLD115 NXP USA Inc.

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 43W (Ta), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Bulk.