на замовлення 1295 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.28 грн |
| 10+ | 48.14 грн |
| 100+ | 27.29 грн |
| 500+ | 20.97 грн |
| 1500+ | 17.51 грн |
| 3000+ | 14.35 грн |
| 9000+ | 13.39 грн |
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Технічний опис PSMN6R0-25YLDX Nexperia
Description: MOSFET N-CH 25V 61A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V.
Інші пропозиції PSMN6R0-25YLDX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN6R0-25YLDX | Виробник : Nexperia |
 Trans MOSFET N-CH 25V 61A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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| PSMN6R0-25YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 25V Drain current: 61A On-state resistance: 8.29mΩ Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMN6R0-25YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
товару немає в наявності |
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PSMN6R0-25YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
товару немає в наявності |
|
| PSMN6R0-25YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 61A; Idm: 244A; 43W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 25V Drain current: 61A On-state resistance: 8.29mΩ Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 244A |
товару немає в наявності |