на замовлення 1295 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 48.28 грн |
10+ | 40.41 грн |
100+ | 24.44 грн |
500+ | 19.33 грн |
1000+ | 19.06 грн |
1500+ | 14.35 грн |
3000+ | 12.82 грн |
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Технічний опис PSMN6R0-25YLDX Nexperia
Description: MOSFET N-CH 25V 61A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V.
Інші пропозиції PSMN6R0-25YLDX
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PSMN6R0-25YLDX | Виробник : NEXPERIA | PSMN6R0-25YLDX SMD N channel transistors |
товар відсутній |
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PSMN6R0-25YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
товар відсутній |
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PSMN6R0-25YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
товар відсутній |