| Кількість | Ціна |
|---|---|
| 6+ | 56.05 грн |
| 10+ | 34.37 грн |
| 100+ | 19.34 грн |
| 500+ | 17.74 грн |
| 1000+ | 15.08 грн |
| 1500+ | 12.64 грн |
| 3000+ | 10.26 грн |
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Технічний опис PSMN6R0-30YLDX Nexperia
Description: MOSFET N-CH 30V 66A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції PSMN6R0-30YLDX за ціною від 33.94 грн до 91.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PSMN6R0-30YLDX | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 66A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
|
| PSMN6R0-30YLDX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 66A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.12 грн |
| 10+ | 55.00 грн |
| 50+ | 40.79 грн |
| 100+ | 33.94 грн |