PSMN6R4-30MLDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 66A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.38 грн |
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Технічний опис PSMN6R4-30MLDX Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V.
Інші пропозиції PSMN6R4-30MLDX за ціною від 11.92 грн до 47 грн
| Фото | Назва | Виробник | Інформація |
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PSMN6R4-30MLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 66A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 15 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN6R4-30MLDX | Виробник : Nexperia |
MOSFET PSMN6R4-30MLD/SOT1210/mLFPAK |
на замовлення 2019 шт: термін постачання 21-30 дні (днів) |
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PSMN6R4-30MLDX | Виробник : NEXPERIA |
N-Channel 30V 66A (Tc) 51W (Tc) Surface Mount LFPAK33 |
товар відсутній |
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| PSMN6R4-30MLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 47A Pulsed drain current: 264A Power dissipation: 51W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN6R4-30MLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 47A Pulsed drain current: 264A Power dissipation: 51W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |