Технічний опис PSMN6R5-80PS,127 Nexperia
Description: MOSFET N-CH 80V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V.
Інші пропозиції PSMN6R5-80PS,127 за ціною від 79.28 грн до 233.48 грн
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PSMN6R5-80PS,127 | Виробник : Nexperia |
MOSFET PSMN6R5-80PS/SOT78/SIL3P |
на замовлення 5290 шт: термін постачання 21-30 дні (днів) |
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PSMN6R5-80PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 470A Power dissipation: 210W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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PSMN6R5-80PS,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V |
товару немає в наявності |



