| Кількість | Ціна |
|---|---|
| 2+ | 175.97 грн |
| 10+ | 110.82 грн |
| 100+ | 66.06 грн |
| 500+ | 55.72 грн |
| 1000+ | 49.37 грн |
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Технічний опис PSMN7R2-100YSFX Nexperia
Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V.
Інші пропозиції PSMN7R2-100YSFX за ціною від 80.14 грн до 201.10 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PSMN7R2-100YSFX | Nexperia USA Inc. |
 Description: NEXTPOWER 80/100V MOSFETSPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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| PSMN7R2-100YSFX |
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Виробник: Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V
Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 201.10 грн |
| 10+ | 124.67 грн |
| 50+ | 94.97 грн |
| 100+ | 80.14 грн |