PSMN7R6-60XSQ NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 51.5A TO220F
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 685+ | 37.71 грн |
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Технічний опис PSMN7R6-60XSQ NXP USA Inc.
Description: MOSFET N-CH 60V 51.5A TO220F, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc), FET Type: N-Channel.
Інші пропозиції PSMN7R6-60XSQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMN7R6-60XSQ | NXP USA Inc. |
Description: MOSFET N-CH 60V 51.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN7R6-60XSQ |
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 51.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Description: MOSFET N-CH 60V 51.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.