PSMN8R0-40PS,127 NEXPERIA
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.22 грн |
| 10+ | 58.17 грн |
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Технічний опис PSMN8R0-40PS,127 NEXPERIA
Description: MOSFET N-CH 40V 77A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
Інші пропозиції PSMN8R0-40PS,127 за ціною від 47.86 грн до 117.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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PSMN8R0-40PS,127 | Nexperia |
MOSFET PSMN8R0-40PS/SOT78/SIL3P |
на замовлення 949 шт: термін постачання 21-30 дні (днів) |
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PSMN8R0-40PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 77A TO220AB Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
на замовлення 4880 шт: термін постачання 21-31 дні (днів) |
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| PSMN8R0-40PS,127 |
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Виробник: Nexperia
MOSFET PSMN8R0-40PS/SOT78/SIL3P
MOSFET PSMN8R0-40PS/SOT78/SIL3P
на замовлення 949 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.56 грн |
| 10+ | 100.03 грн |
| 100+ | 66.69 грн |
| 500+ | 56.61 грн |
| PSMN8R0-40PS,127 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
на замовлення 4880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.27 грн |
| 10+ | 93.93 грн |
| 100+ | 74.77 грн |
| 500+ | 59.37 грн |
| 1000+ | 50.38 грн |
| 2000+ | 47.86 грн |