| Кількість | Ціна |
|---|---|
| 2+ | 209.37 грн |
| 10+ | 173.45 грн |
| 50+ | 142.45 грн |
| 100+ | 122.20 грн |
| 250+ | 115.22 грн |
| 500+ | 108.23 грн |
| 1000+ | 90.78 грн |
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Технічний опис PSMN8R5-100PSQ Nexperia
Description: MOSFET N-CH 100V 100A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції PSMN8R5-100PSQ за ціною від 98.69 грн до 211.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PSMN8R5-100PSQ | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 100A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1371 шт: термін постачання 21-31 дні (днів) |
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| PSMN8R5-100PSQ |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 211.32 грн |
| 10+ | 170.81 грн |
| 100+ | 138.17 грн |
| 500+ | 115.26 грн |
| 1000+ | 98.69 грн |