PSMNR70-30YLHX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис PSMNR70-30YLHX Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 2mA, Power Dissipation (Max): 268W (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції PSMNR70-30YLHX
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
PSMNR70-30YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PSMNR70-30YLHX | Nexperia |
MOSFETs SOT669 N-CH 30V 300A |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| PSMNR70-30YLHX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PSMNR70-30YLHX |
|
Виробник: Nexperia
MOSFETs SOT669 N-CH 30V 300A
MOSFETs SOT669 N-CH 30V 300A
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.