Технічний опис PSMNR70-30YLHX NEXPERIA
Description: MOSFET N-CH 30V 300A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V, Power Dissipation (Max): 268W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 2mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V.
Інші пропозиції PSMNR70-30YLHX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PSMNR70-30YLHX | Виробник : Nexperia |
 Trans MOSFET N-CH 30V 300A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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PSMNR70-30YLHX | Виробник : Nexperia |
Trans MOSFET N-CH 30V 300A 5-Pin(4+Tab) LFPAK T/R |
товару немає в наявності |
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| PSMNR70-30YLHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 30V Drain current: 281A On-state resistance: 2mΩ Type of transistor: N-MOSFET Power dissipation: 268W Polarisation: unipolar Kind of package: reel; tape Gate charge: 157nC Technology: NextPowerS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1589A Mounting: SMD кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMNR70-30YLHX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V |
товару немає в наявності |
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PSMNR70-30YLHX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V |
товару немає в наявності |
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PSMNR70-30YLHX | Виробник : Nexperia |
MOSFETs PSMNR70-30YLH/SOT669/LFPAK |
товару немає в наявності |
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| PSMNR70-30YLHX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 30V Drain current: 281A On-state resistance: 2mΩ Type of transistor: N-MOSFET Power dissipation: 268W Polarisation: unipolar Kind of package: reel; tape Gate charge: 157nC Technology: NextPowerS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1589A Mounting: SMD |
товару немає в наявності |