PSMNR90-80CSFJ Nexperia
на замовлення 196 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 797.84 грн |
| 10+ | 674.34 грн |
| 100+ | 524.62 грн |
| 1000+ | 474.02 грн |
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Технічний опис PSMNR90-80CSFJ Nexperia
Description: PSMNR90-80CSF/SOT8005A/CCPAK12, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 505A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V, Power Dissipation (Max): 1.55kW (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 463 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32115 pF @ 40 V.
Інші пропозиції PSMNR90-80CSFJ за ціною від 527.97 грн до 798.52 грн
| Фото | Назва | Виробник | Інформація |
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PSMNR90-80CSFJ | Виробник : Nexperia USA Inc. |
 Description: PSMNR90-80CSF/SOT8005A/CCPAK12Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 505A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 1.55kW (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 463 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32115 pF @ 40 V |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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PSMNR90-80CSFJ | Виробник : Nexperia USA Inc. |
Description: PSMNR90-80CSF/SOT8005A/CCPAK12 Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 505A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 1.55kW (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 463 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32115 pF @ 40 V |
товару немає в наявності |