PSMP075N15NS1_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 258.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 325.5 грн |
| 10+ | 262.96 грн |
| 100+ | 212.7 грн |
| 500+ | 177.43 грн |
| 1000+ | 151.93 грн |
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Технічний опис PSMP075N15NS1_T0_00601 Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, Power Dissipation (Max): 258.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V.
Інші пропозиції PSMP075N15NS1_T0_00601 за ціною від 179.74 грн до 348.7 грн
| Фото | Назва | Виробник | Інформація |
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PSMP075N15NS1_T0_00601 | Виробник : Panjit |
MOSFET 150V N-Channel Enhancement Mode MOSFET |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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PSMP075N15NS1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 125A Pulsed drain current: 350A Power dissipation: 258.6W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMP075N15NS1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 125A Pulsed drain current: 350A Power dissipation: 258.6W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |