| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.67 грн |
| 10+ | 42.55 грн |
| 100+ | 24.92 грн |
| 500+ | 20.02 грн |
| 1000+ | 17.60 грн |
| 3000+ | 13.94 грн |
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Технічний опис PXP010-20QXJ Nexperia
Description: PXP010-20QX/SOT8002/MLPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 21W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PXP010-20QXJ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PXP010-20QXJ | Nexperia USA Inc. |
 Description: PXP010-20QX/SOT8002/MLPAK33Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
PXP010-20QXJ | Nexperia USA Inc. |
Description: PXP010-20QX/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PXP010-20QXJ |
|
Виробник: Nexperia USA Inc.
Description: PXP010-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: PXP010-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PXP010-20QXJ |
|
Виробник: Nexperia USA Inc.
Description: PXP010-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: PXP010-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 37.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.