| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.20 грн |
| 10+ | 31.84 грн |
| 100+ | 18.85 грн |
| 500+ | 14.91 грн |
| 1000+ | 13.53 грн |
| 3000+ | 11.80 грн |
| 6000+ | 10.91 грн |
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Технічний опис PXP015-30QLJ Nexperia
Description: P-CHANNEL TRENCH MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 16W (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції PXP015-30QLJ за ціною від 24.87 грн до 68.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PXP015-30QLJ | Nexperia USA Inc. |
 Description: P-CHANNEL TRENCH MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 537 шт: термін постачання 21-31 дні (днів) |
|
| PXP015-30QLJ |
|
Виробник: Nexperia USA Inc.
Description: P-CHANNEL TRENCH MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 16W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: P-CHANNEL TRENCH MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 16W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 40.98 грн |
| 50+ | 30.05 грн |
| 100+ | 24.87 грн |