QGU4929RAM Pulse Electronics
Виробник: Pulse Electronics
Description: MDL DIP 5G 4 PORT POE 90W
Packaging: Tube
Inductance: 180µH
Size / Dimension: 1.319" L x 1.142" W (33.50mm x 29.00mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Transformer Type: LAN 2.5/5G Base-T, Power over Ethernet (PoE)
Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver
Height - Seated (Max): 0.661" (16.80mm)
Description: MDL DIP 5G 4 PORT POE 90W
Packaging: Tube
Inductance: 180µH
Size / Dimension: 1.319" L x 1.142" W (33.50mm x 29.00mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Transformer Type: LAN 2.5/5G Base-T, Power over Ethernet (PoE)
Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver
Height - Seated (Max): 0.661" (16.80mm)
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Технічний опис QGU4929RAM Pulse Electronics
Description: MDL DIP 5G 4 PORT POE 90W, Packaging: Tube, Inductance: 180µH, Size / Dimension: 1.319" L x 1.142" W (33.50mm x 29.00mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 85°C, Transformer Type: LAN 2.5/5G Base-T, Power over Ethernet (PoE), Turns Ratio - Primary:Secondary: 1:1CT Transmitter, 1:1CT Receiver, Height - Seated (Max): 0.661" (16.80mm).