QH8JC5TCR ROHM Semiconductor
на замовлення 9892 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 96.75 грн |
| 10+ | 73.26 грн |
| 100+ | 52.03 грн |
| 500+ | 41.76 грн |
| 1000+ | 36.40 грн |
| 3000+ | 33.54 грн |
| 6000+ | 32.37 грн |
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Технічний опис QH8JC5TCR ROHM Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V, Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8JC5TCR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| QH8JC5TCR | Виробник : ROHM SEMICONDUCTOR |
 QH8JC5TCR Multi channel transistors |
товару немає в наявності |
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QH8JC5TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
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QH8JC5TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |