QH8JC5TCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 4606 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.2 грн |
| 10+ | 64.35 грн |
| 100+ | 50.01 грн |
| 500+ | 39.79 грн |
| 1000+ | 32.41 грн |
Відгуки про товар
Написати відгук
Технічний опис QH8JC5TCR Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V, Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8JC5TCR за ціною від 30.16 грн до 87.57 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
QH8JC5TCR | Виробник : ROHM Semiconductor |
MOSFET -60V Dual Pch+Pch Small Signal MOSFET |
на замовлення 13239 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| QH8JC5TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 101mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
|
|
QH8JC5TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товар відсутній |
|||||||||||||||||
| QH8JC5TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 101mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |