QH8K22TCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.44 грн |
| 6000+ | 15.66 грн |
| 9000+ | 15.52 грн |
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Технічний опис QH8K22TCR Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6.5A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.1W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 10µA, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V.
Інші пропозиції QH8K22TCR за ціною від 15.67 грн до 69.12 грн
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QH8K22TCR | ROHM Semiconductor |
MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET. |
на замовлення 2407 шт: термін постачання 21-30 дні (днів) |
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QH8K22TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 6.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 13071 шт: термін постачання 21-31 дні (днів) |
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| QH8K22TCR |
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Виробник: ROHM Semiconductor
MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET.
MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET.
на замовлення 2407 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.90 грн |
| 10+ | 43.66 грн |
| 100+ | 26.23 грн |
| 500+ | 21.95 грн |
| 1000+ | 18.71 грн |
| 3000+ | 16.64 грн |
| 6000+ | 15.67 грн |
| QH8K22TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 13071 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.12 грн |
| 10+ | 44.72 грн |
| 100+ | 29.91 грн |
| 500+ | 22.27 грн |
| 1000+ | 20.17 грн |