QH8K26TR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET 2N-CH 40V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.67 грн |
| 10+ | 51.2 грн |
| 100+ | 39.81 грн |
| 500+ | 31.67 грн |
| 1000+ | 25.8 грн |
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Технічний опис QH8K26TR Rohm Semiconductor
Description: MOSFET 2N-CH 40V 7A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V, Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8K26TR за ціною від 23.18 грн до 68.51 грн
| Фото | Назва | Виробник | Інформація |
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QH8K26TR | Виробник : ROHM Semiconductor |
MOSFET QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive. |
на замовлення 2405 шт: термін постачання 21-30 дні (днів) |
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| QH8K26TR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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QH8K26TR | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 7A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товар відсутній |
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| QH8K26TR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |