| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.57 грн |
| 10+ | 52.08 грн |
| 100+ | 29.82 грн |
| 500+ | 23.13 грн |
| 1000+ | 20.57 грн |
| 3000+ | 17.95 грн |
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Технічний опис QH8KC5TCR ROHM Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8KC5TCR за ціною від 33.92 грн до 85.43 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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QH8KC5TCR | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 3A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
|
| QH8KC5TCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.43 грн |
| 10+ | 51.60 грн |
| 100+ | 33.92 грн |