QH8MA3TCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис QH8MA3TCR Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції QH8MA3TCR за ціною від 17.19 грн до 86.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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QH8MA3TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Part Status: Active Supplier Device Package: TSMT8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QH8MA3TCR | ROHM Semiconductor |
MOSFETs 30V N+P Ch MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| QH8MA3TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Part Status: Active
Supplier Device Package: TSMT8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.10 грн |
| 10+ | 50.26 грн |
| 100+ | 31.58 грн |
| 500+ | 24.04 грн |
| 1000+ | 20.96 грн |
| QH8MA3TCR |
![]() |
Виробник: ROHM Semiconductor
MOSFETs 30V N+P Ch MOSFET
MOSFETs 30V N+P Ch MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.18 грн |
| 10+ | 53.27 грн |
| 100+ | 30.44 грн |
| 500+ | 23.61 грн |
| 1000+ | 21.40 грн |
| 3000+ | 20.16 грн |
| 6000+ | 17.19 грн |


