QH8MC5TCR Rohm Semiconductor

Description: MOSFET N/P-CH 60V 3A TSMT8, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.1W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V.