
QRT812D_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 1.2KV 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
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Технічний опис QRT812D_R2_00001 Panjit International Inc.
Description: DIODE GEN PURP 1.2KV 8A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 45 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A, Current - Reverse Leakage @ Vr: 3 µA @ 1200 V.
Інші пропозиції QRT812D_R2_00001
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QRT812D_R2_00001 | Виробник : Panjit |
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товару немає в наявності |