| Кількість | Ціна |
|---|---|
| 5+ | 68.39 грн |
| 10+ | 50.86 грн |
| 100+ | 34.14 грн |
| 500+ | 27.19 грн |
| 1000+ | 16.55 грн |
| 3000+ | 14.26 грн |
| 6000+ | 13.07 грн |
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Технічний опис QS5U16TR ROHM Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5, Packaging: Tape & Reel (TR), Package / Case: SOT-23-5 Thin, TSOT-23-5, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT5, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V.
Інші пропозиції QS5U16TR
| Фото | Назва | Виробник | Інформація |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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QS5U16TR | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT5 Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V |
товару немає в наявності |
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QS5U16TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 0.5A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 1.25W Pulsed drain current: 2A Case: TSOT25 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET + Schottky |
товару немає в наявності |