Технічний опис QS5U21TR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A, Type of transistor: P-MOSFET + Schottky, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.5A, Pulsed drain current: -6A, Power dissipation: 1.25W, Case: TSOT25, Gate-source voltage: ±12V, On-state resistance: 0.34Ω, Mounting: SMD, Gate charge: 4.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції QS5U21TR
Фото | Назва | Виробник | Інформація |
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QS5U21TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U21TR | Виробник : Rohm Semiconductor | Description: MOSFET P-CH 20V 1.5A TSMT5 |
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QS5U21TR | Виробник : ROHM Semiconductor | MOSFET P-CH 20V 1.5A |
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QS5U21TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |