QS5U26TR ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
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Технічний опис QS5U26TR ROHM SEMICONDUCTOR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A, Type of transistor: P-MOSFET + Schottky, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.5A, Pulsed drain current: -6A, Power dissipation: 1.25W, Case: TSOT25, Gate-source voltage: ±12V, On-state resistance: 0.34Ω, Mounting: SMD, Gate charge: 4.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції QS5U26TR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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QS5U26TR | Виробник : Rohm Semiconductor | Description: MOSFET P-CH 20V 1.5A TSMT5 |
товар відсутній |
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QS5U26TR | Виробник : Rohm Semiconductor | Description: MOSFET P-CH 20V 1.5A TSMT5 |
товар відсутній |
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QS5U26TR | Виробник : ROHM Semiconductor | MOSFET P-CH 20V 1.5A |
товар відсутній |
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QS5U26TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |