QS6K1FRATR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.38 грн |
6000+ | 13.12 грн |
Відгуки про товар
Написати відгук
Технічний опис QS6K1FRATR Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V, Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції QS6K1FRATR за ціною від 12.75 грн до 41.77 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
QS6K1FRATR | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14085 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
QS6K1FRATR | Виробник : ROHM Semiconductor | MOSFET 0.26Rds(on) 1.7Qg |
на замовлення 3397 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
QS6K1FRATR | Виробник : ROHM SEMICONDUCTOR | QS6K1FRATR Multi channel transistors |
товар відсутній |