QS8J11TCR

Description: MOSFET 2P-CH 12V 3.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 550mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V, Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs.