QS8M13TCR Rohm Semiconductor
| Кількість | Ціна |
|---|---|
| 271+ | 51.65 грн |
| 282+ | 49.58 грн |
| 500+ | 47.79 грн |
| 1000+ | 44.58 грн |
| 2500+ | 40.06 грн |
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Технічний опис QS8M13TCR Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8.
Інші пропозиції QS8M13TCR за ціною від 35.12 грн до 89.24 грн
| Фото | Назва | Виробник | Інформація |
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QS8M13TCR | Виробник : ROHM Semiconductor |
 MOSFETs 4V Drive Nch + Pch MOSFET |
на замовлення 2996 шт: термін постачання 21-30 дні (днів) |
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QS8M13TCR | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 |
товару немає в наявності |
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QS8M13TCR | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 |
товару немає в наявності |