QSD-10HCS500U Quest Semi
Виробник: Quest Semi
Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
| Кількість | Ціна |
|---|---|
| 1+ | 3129.84 грн |
| 10+ | 2612.34 грн |
| 100+ | 2411.38 грн |
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Технічний опис QSD-10HCS500U Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho, Current - Average Rectified (Io): 66A, Capacitance @ Vr, F: 3880pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 600 µA @ 5000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 5000 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2.
Інші пропозиції QSD-10HCS500U за ціною від 5458.63 грн до 8527.15 грн
| Фото | Назва | Виробник | Інформація |
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QSD10HCS500U | Quest Semi |
Description: 5000v 10amp Homogeneous SiC Scho Current - Average Rectified (Io): 66A Capacitance @ Vr, F: 3880pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 600 µA @ 5000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A Voltage - DC Reverse (Vr) (Max): 5000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
| QSD10HCS500U |
|
Виробник: Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho
Current - Average Rectified (Io): 66A
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 5000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Description: 5000v 10amp Homogeneous SiC Scho
Current - Average Rectified (Io): 66A
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 5000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8527.15 грн |
| 10+ | 7527.33 грн |
| 100+ | 6500.88 грн |
| 500+ | 5458.63 грн |