Технічний опис QST6TR
Description: TRANS PNP 12V 2A TSMT6, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TSMT6 (SC-95), Frequency - Transition: 360MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP.
Інші пропозиції QST6TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
QST6TR | Rohm Semiconductor |
Description: TRANS PNP 12V 2A TSMT6Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 360MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
QST6TR | Rohm Semiconductor |
Description: TRANS PNP 12V 2A TSMT6Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 360MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
QST6TR | ROHM Semiconductor |
Bipolar Transistors - BJT PNP BIPOLAR 12V 2A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| QST6TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 2A TSMT6
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Description: TRANS PNP 12V 2A TSMT6
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QST6TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 2A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 2A TSMT6
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| QST6TR |
![]() |
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT PNP BIPOLAR 12V 2A
Bipolar Transistors - BJT PNP BIPOLAR 12V 2A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.



