| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.20 грн |
| 10+ | 61.76 грн |
| 100+ | 41.14 грн |
| 500+ | 32.38 грн |
| 1000+ | 29.55 грн |
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Технічний опис R6002END3TL1 ROHM Semiconductor
Description: MOSFET N-CH 600V 1.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.
Інші пропозиції R6002END3TL1 за ціною від 30.16 грн до 110.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6002END3TL1 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 1.7A TO252FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) |
на замовлення 1901 шт: термін постачання 21-31 дні (днів) |
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| R6002END3TL1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 1.7A TO252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Description: MOSFET N-CH 600V 1.7A TO252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
на замовлення 1901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.28 грн |
| 10+ | 66.93 грн |
| 100+ | 44.72 грн |
| 500+ | 33.03 грн |
| 1000+ | 30.16 грн |