R6002JND4TL1 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.99 грн |
| 10+ | 51.68 грн |
| 100+ | 30.44 грн |
| 500+ | 23.68 грн |
| 1000+ | 21.47 грн |
| 2000+ | 19.74 грн |
| 4000+ | 18.36 грн |
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Технічний опис R6002JND4TL1 ROHM Semiconductor
Description: 600V 1A SOT-223-3, PRESTOMOS WIT, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V, Power Dissipation (Max): 6.6W (Tc), Vgs(th) (Max) @ Id: 7V @ 100µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V.
Інші пропозиції R6002JND4TL1 за ціною від 19.69 грн до 81.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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R6002JND4TL1 | Rohm Semiconductor |
 Description: 600V 1A SOT-223-3, PRESTOMOS WITPackaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V Power Dissipation (Max): 6.6W (Tc) Vgs(th) (Max) @ Id: 7V @ 100µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
на замовлення 3396 шт: термін постачання 21-31 дні (днів) |
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| R6002JND4TL1 |
|
Виробник: Rohm Semiconductor
Description: 600V 1A SOT-223-3, PRESTOMOS WIT
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V
Power Dissipation (Max): 6.6W (Tc)
Vgs(th) (Max) @ Id: 7V @ 100µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Description: 600V 1A SOT-223-3, PRESTOMOS WIT
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V
Power Dissipation (Max): 6.6W (Tc)
Vgs(th) (Max) @ Id: 7V @ 100µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
на замовлення 3396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.55 грн |
| 10+ | 49.28 грн |
| 100+ | 32.48 грн |
| 500+ | 23.70 грн |
| 1000+ | 21.52 грн |
| 2000+ | 19.69 грн |