R6004JND3TL1 Rohm Semiconductor

Description: MOSFET N-CH 600V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 7V @ 450µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V.