R6006JND3TL1 Rohm Semiconductor

Description: MOSFET N-CH 600V 6A TO252, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 7V @ 800µA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).