R6007KNXC7G Rohm Semiconductor

Description: 600V 7A TO-220FM, HIGH-SPEED SWI, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.