R6007RND3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
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Технічний опис R6007RND3TL1 Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 7V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V.
Інші пропозиції R6007RND3TL1 за ціною від 44.32 грн до 103.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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R6007RND3TL1 | Rohm Semiconductor |
Description: 600V 7A TO-252, PRESTOMOS WITH IPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 7V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V |
на замовлення 3012 шт: термін постачання 21-31 дні (днів) |
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R6007RND3TL1 | ROHM Semiconductor |
MOSFETs TO252 650V 21A N-CH MOSFET |
на замовлення 5390 шт: термін постачання 21-30 дні (днів) |
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| R6007RND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 3012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.30 грн |
| 10+ | 67.46 грн |
| 25+ | 61.21 грн |
| 100+ | 50.99 грн |
| 250+ | 47.91 грн |
| 500+ | 46.05 грн |
| R6007RND3TL1 |
![]() |
Виробник: ROHM Semiconductor
MOSFETs TO252 650V 21A N-CH MOSFET
MOSFETs TO252 650V 21A N-CH MOSFET
на замовлення 5390 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.90 грн |
| 10+ | 67.96 грн |
| 100+ | 49.22 грн |
| 500+ | 47.29 грн |
| 2500+ | 45.49 грн |
| 5000+ | 44.32 грн |


