R6007RND3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Відгуки про товар
Написати відгук
Технічний опис R6007RND3TL1 Rohm Semiconductor
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 7V, Verlustleistung: 96W, SVHC: To Be Advised, Bauform - Transistor: TO-252, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 15V, Drain-Source-Durchgangswiderstand: 0.94ohm.
Інші пропозиції R6007RND3TL1 за ціною від 45.94 грн до 96.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
R6007RND3TL1 | Rohm Semiconductor |
Description: 600V 7A TO-252, PRESTOMOS WITH I Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 7V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V |
на замовлення 3012 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
R6007RND3TL1 | ROHM Semiconductor |
MOSFETs TO252 650V 21A N-CH MOSFET |
на замовлення 5390 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
 |
R6007RND3TL1 | ROHM |
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 7V Verlustleistung: 96W SVHC: To Be Advised Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 15V Drain-Source-Durchgangswiderstand: 0.94ohm |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
R6007RND3TL1 | ROHM |
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 7V Verlustleistung: 96W SVHC: To Be Advised Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 15V Drain-Source-Durchgangswiderstand: 0.94ohm |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| R6007RND3TL1 |
|
Виробник: Rohm Semiconductor
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
Description: 600V 7A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3.5A, 15V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
на замовлення 3012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.09 грн |
| 10+ | 67.31 грн |
| 25+ | 61.07 грн |
| 100+ | 50.88 грн |
| 250+ | 47.80 грн |
| 500+ | 45.94 грн |
| R6007RND3TL1 |
|
Виробник: ROHM Semiconductor
MOSFETs TO252 650V 21A N-CH MOSFET
MOSFETs TO252 650V 21A N-CH MOSFET
на замовлення 5390 шт:
термін постачання 21-30 дні (днів)
| R6007RND3TL1 |
|
Виробник: ROHM
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 7V
Verlustleistung: 96W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.94ohm
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 7V
Verlustleistung: 96W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.94ohm
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| R6007RND3TL1 |
|
Виробник: ROHM
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 7V
Verlustleistung: 96W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.94ohm
Description: ROHM - R6007RND3TL1 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.94 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 7V
Verlustleistung: 96W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.94ohm
на замовлення 30 шт:
термін постачання 21-31 дні (днів)