R6009END3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Відгуки про товар
Написати відгук
Технічний опис R6009END3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Інші пропозиції R6009END3TL1 за ціною від 68.90 грн до 221.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
R6009END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 5016 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
R6009END3TL1 | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise |
на замовлення 2241 шт: термін постачання 21-30 дні (днів) |
|
| R6009END3TL1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 177.07 грн |
| 10+ | 141.72 грн |
| 100+ | 112.79 грн |
| 500+ | 89.56 грн |
| 1000+ | 75.99 грн |
| R6009END3TL1 |
|
Виробник: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
на замовлення 2241 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.48 грн |
| 10+ | 142.90 грн |
| 100+ | 86.98 грн |
| 500+ | 70.41 грн |
| 1000+ | 68.90 грн |