R6009ENX Rohm Semiconductor

Description: MOSFET N-CH 600V 9A TO220FM, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).