R6009JND3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
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Технічний опис R6009JND3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 7V @ 1.38mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V.
Інші пропозиції R6009JND3TL1 за ціною від 75.94 грн до 228.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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R6009JND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252 Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 7V @ 1.38mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6009JND3TL1 | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Fast Recover |
на замовлення 2396 шт: термін постачання 21-30 дні (днів) |
|
| R6009JND3TL1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.15 грн |
| 10+ | 173.73 грн |
| 100+ | 139.66 грн |
| 500+ | 107.69 грн |
| 1000+ | 89.23 грн |
| R6009JND3TL1 |
|
Виробник: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Fast Recover
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Fast Recover
на замовлення 2396 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.73 грн |
| 10+ | 146.87 грн |
| 100+ | 89.05 грн |
| 500+ | 76.63 грн |
| 1000+ | 75.94 грн |