R6009JNXC7G Rohm Semiconductor

Description: MOSFET N-CH 600V 9A TO220FM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 7V @ 1.38mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V.