R6011END3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 2+ | 237.83 грн |
| 10+ | 206.04 грн |
| 100+ | 165.63 грн |
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Технічний опис R6011END3TL1 Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Power Dissipation (Max): 124W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Інші пропозиції R6011END3TL1 за ціною від 84.14 грн до 246.64 грн
| Фото | Назва | Виробник | Інформація |
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R6011END3TL1 | Виробник : ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 600V 11A 3rd Gen, Low Noise |
на замовлення 2295 шт: термін постачання 21-30 дні (днів) |
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R6011END3TL1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
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| R6011END3TL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Gate charge: 32nC Polarisation: unipolar On-state resistance: 720mΩ Case: TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 22A Power dissipation: 124W Drain-source voltage: 600V Kind of channel: enhancement |
товару немає в наявності |