R6012JNXC7G ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.61 грн |
| 10+ | 145.28 грн |
| 100+ | 120.81 грн |
| 500+ | 112.53 грн |
| 1000+ | 104.24 грн |
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Технічний опис R6012JNXC7G ROHM Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 7V @ 2.5mA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V.
Інші пропозиції R6012JNXC7G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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R6012JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 12A TO220FM Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 7V @ 2.5mA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V |
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| R6012JNXC7G |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Description: MOSFET N-CH 600V 12A TO220FM
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
товару немає в наявності
В кошику
од. на суму грн.