| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.23 грн |
| 10+ | 173.86 грн |
| 100+ | 108.38 грн |
| 500+ | 93.20 грн |
| 1000+ | 91.12 грн |
| 2500+ | 86.29 грн |
| 5000+ | 80.77 грн |
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Технічний опис R6014YND3TL1 ROHM Semiconductor
Description: NCH 600V 14A, TO-252, POWER MOSF, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 6V @ 1.4mA, Power Dissipation (Max): 132W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції R6014YND3TL1 за ціною від 91.05 грн до 287.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6014YND3TL1 | Rohm Semiconductor |
 Description: NCH 600V 14A, TO-252, POWER MOSFInput Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2341 шт: термін постачання 21-31 дні (днів) |
|
| R6014YND3TL1 |
|
Виробник: Rohm Semiconductor
Description: NCH 600V 14A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: NCH 600V 14A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.35 грн |
| 10+ | 181.88 грн |
| 100+ | 127.61 грн |
| 500+ | 98.03 грн |
| 1000+ | 91.05 грн |