Технічний опис R6015FNJTL Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції R6015FNJTL за ціною від 105.79 грн до 357.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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R6015FNJTL | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 15A LPTPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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R6015FNJTL | Rohm Semiconductor |
Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) LPTS T/R |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| R6015FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.93 грн |
| 10+ | 183.38 грн |
| 100+ | 134.28 грн |
| 500+ | 105.79 грн |
| R6015FNJTL |
|
Виробник: Rohm Semiconductor
Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) LPTS T/R
Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) LPTS T/R
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 357.44 грн |