R6018JNXC7G Rohm Semiconductor

Description: MOSFET N-CH 600V 18A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 7V @ 4.2mA, Power Dissipation (Max): 72W (Tc), Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.